Abstract

In a Ill-nitride light emitting device, the device layers (10) including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abuik corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant a<SUB>in-plane</SUB> corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is | (a<SUB>in-plane</SUB> - a<SUB>bulk</SUB>) I / a<SUB>bulk.</SUB> In some embodiments, the strain in the light emitting layer is less than 1%.


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Document History
  • Publication: Jul 3, 2008
  • Application: Dec 21, 2007
    WO IB 2007055266 W
  • Priority: Dec 22, 2006
    US US 61580806 A

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