Method For Producing A Semiconductor-on-insulator Structure

Abstract

The invention relates to a process of treating a structure for electronics or optoelectronics, the structure comprising successively: - a substrate, - a dielectric layer having a thermal conductivity substantially higher than the thermal conductivity of an oxide layer made of an oxide of a semiconductor material, - an oxide layer made of an oxide of the said semiconductor material, - a thin semiconductor layer made of said semiconductor material, characterized in that it comprises a heat treatment of the structure in an inert or reducing atmosphere with a temperature value and a duration chosen for inciting an amount of oxygen of the oxide layer to diffuse through the semiconductor layer so that the thickness of the oxide layer decreases by a determined value. The invention also relates to a process of manufacturing a structure for electronics or optoelectronics comprising the said heat treatment.


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Document History
  • Publication: Jul 3, 2008
  • Application: Dec 26, 2006
    WO IB 2006003957 W
  • Priority: Dec 26, 2006
    IB IB 2006003957 W

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