Semiconductor Fabrication Method For Making Small Features

  • Published: Sep 27, 2005
  • Earliest Priority: Jan 17 2003
  • Family: 10
  • Cited Works: 0
  • Cited by: 0
  • Cites: 0
  • Additional Info:

The full document isn't yet available to us from the patent office, but we've found a related patent (family member) to use for our images and PDF.


A semiconductor fabrication method that includes forming a film (109) comprising an imaging layer (112) and an under layer (110) over a semiconductor substrate (102). The imaging layer (112) is patterned to produce a printed feature (116) having a printed dimension (124). The under layer (110) is then processed to produce a sloped sidewall void (120) in the under layer (110) wherein the void (120) has a finished dimension (126) in proximity to the underlying substrate that is less than the printed dimension. Processing the under layer (110) may include exposing the wafer to high density low pressure N2 plasma.


Information currently unavailable.

Family Member PDF
Family Member Preview
These are the images from a related family member, as the full document isn't yet available to us from the patent office.
Document History
  • Publication: Sep 27, 2005
  • Application: Jul 15, 2005
    KR KR 20057013155 A
  • Priority: Jan 17, 2003
    US US 34626303 A

Download Citation

Sign in to the Lens