Semiconductor Fabrication Method For Making Small Features

  • Published: Jul 22, 2004
  • Earliest Priority: Jan 17 2003
  • Family: 10
  • Cited Works: 0
  • Cited by: 0
  • Cites: 12
  • Additional Info: Full text
Abstract

A semiconductor fabrication method that includes forming a film (109) comprising an imaging layer (112) and an under layer (110) over a semiconductor substrate (102). The imaging layer (112) is patterned to produce a printed feature (116) having a printed dimension (124). The under layer (110) is then processed to produce a sloped sidewall void (120) in the under layer (110) wherein the void (120) has a finished dimension (126) in proximity to the underlying substrate that is less than the printed dimension. Processing the under layer (110) may include exposing the wafer to high density low pressure N2 plasma.


Claims
Download PDF
Document Preview
Document History
  • Publication: Jul 22, 2004
  • Application: Jan 17, 2003
    US US 34626303 A
  • Priority: Jan 17, 2003
    US US 34626303 A

Download Citation


Sign in to the Lens

Feedback