Method For Manufacturing A Poly-crystal Silicon Photovoltaic Device Using Horizontal Metal Induced Crystallization

  • Published: Jul 17, 2008
  • Earliest Priority: Jan 09 2007
  • Family: 7
  • Cited Works: 1
  • Cited by: 0
  • Cites: 4
  • Additional Info: Full text
Abstract

A method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization comprises the steps of forming at least one layer of an amorphous silicon thin film on a substrate, forming at least one groove of which depth is less than or equal to that of the thin film on the amorphous silicon thin film, and horizontally crystallizing the amorphous silicon thin film by forming a metal layer on an upper portion of the groove. Since a crystal shape and a growth direction of the photovoltaic device can be adjusted by the method, a poly-crystal silicon thin film for improving current flow can be formed at a low-temperature.


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Document History
  • Publication: Jul 17, 2008
  • Application: Jan 9, 2008
    WO KR 2008000121 W
  • Priority: Jan 9, 2007
    KR KR 20070002611 A

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