Phase Change Memory Devices And Methods Comprising Gallium, Lanthanide And Chalcogenide Compounds

Abstract

A new class of phase change materials has been discovered based on compounds of: Ga; lanthanide; and chalcogenide. This includes compounds of Ga, La, and S (GLS) as well as related compounds in which there is substitution of S with O, Se and/or Te. Moreover, La can be substituted with other lanthanide series elements. It has been demonstrated that this class of materials exhibit low energy switching. For example, the GLS material can provide an optical recording medium with erasability 3-5 dB greater than the erasability of GeSbTe (GST) material which is the standard material for phase change memories.


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Document History
  • Publication: May 12, 2015
  • Application: Dec 3, 2013
    US US 201314094832 A
  • Priority: Dec 3, 2013
    US US 201314094832 A
  • Priority: Dec 20, 2006
    US US 64304406 A
  • Priority: Dec 20, 2005
    US US 75216005 P
  • Priority: Dec 20, 2005
    GB GB 0525901 A

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