Semiconductor Fabrication Method For Making Small Features

  • Published: Feb 16, 2005
  • Earliest Priority: Jan 17 2003
  • Family: 10
  • Cited Works: 0
  • Cited by: 1
  • Cites: 0
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Abstract

A semiconductor fabrication method that includes forming a film (109) comprising an imaging layer (112) and an under layer (110) over a semiconductor substrate (102). The imaging layer (112) is patterned to produce a printed feature (116) having a printed dimension (124). The under layer (110) is then processed to produce a sloped sidewall void (120) in the under layer (110) wherein the void (120) has a finished dimension (126) in proximity to the underlying substrate that is less than the printed dimension. Processing the under layer (110) may include exposing the wafer to high density low pressure N2 plasma.


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Document History
  • Publication: Feb 16, 2005
  • Application: Dec 12, 2003
    TW TW 92135222 A
  • Priority: Jan 17, 2003
    US US 34626303 A

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