Thin Film Iii-v Compound Solar Cell

  • Published: Jan 8, 2009
  • Earliest Priority: Jul 03 2007
  • Family: 25
  • Cited Works: 1
  • Cited by: 4
  • Cites: 4
  • Additional Info: Full text
Abstract

The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film HI-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.


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Document History
  • Publication: Jan 8, 2009
  • Application: Jul 3, 2008
    WO US 2008/0008262 W
  • Priority: Apr 17, 2008
    US US 4585008 P
  • Priority: Jul 3, 2007
    US US 95818607 P

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