Making A Semiconductor Device Using A Highly Conductive Composition For Wafer Coating

  • Published: Jul 16, 2008
  • Earliest Priority: Jan 10 2007
  • Family: 14
  • Cited Works: 0
  • Cited by: 2
  • Cites: 3
  • Additional Info:
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Abstract

A conductive composition for coating a semiconductor wafer comprises conductive filler that has an average particle size of less than 2 microns and a maximum particle size of less than 10 microns, a first resin that has a softening point between 80-260°C, solvent, curing agent, and a second resin, wherein at room temperature the first resin is substantially soluble in the solvent.


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Document History
  • Publication: Jul 16, 2008
  • Application: Jan 10, 2008
    EP EP 08000370 A
  • Priority: Jan 10, 2007
    US US 65171907 A

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