{"search_session":{},"preferences":{"l":"en","queryLanguage":"en"},"patentId":"081-415-710-332-273","frontPageModel":{"patentViewModel":{"ref":{"entityRefType":"PATENT","entityRefId":"081-415-710-332-273"},"entityMetadata":{"linkedIds":{"empty":true},"tags":[],"collections":[{"id":8876,"type":"PATENT","title":"Northwestern University Patent Portfolio","description":"","access":"OPEN_ACCESS","displayAvatar":true,"attested":false,"itemCount":17491,"tags":[],"user":{"id":91044780,"username":"Cambialens","firstName":"","lastName":"","created":"2015-05-04T00:55:26.000Z","displayName":"Cambialens","preferences":"{\"usage\":\"public\",\"beta\":false}","accountType":"PERSONAL","isOauthOnly":false},"notes":[{"id":8210,"type":"COLLECTION","user":{"id":91044780,"username":"Cambialens","firstName":"","lastName":"","created":"2015-05-04T00:55:26.000Z","displayName":"Cambialens","preferences":"{\"usage\":\"public\",\"beta\":false}","accountType":"PERSONAL","isOauthOnly":false},"text":"
Search applicants and Owners separately = \" Northwestern University\", 'Northw* Univ*\" , \"Univ Northwestern\", \"
Search applicants and Owners separately = \" Northwestern University\", 'Northw* Univ*\" , \"Univ Northwestern\", \"
providing a doped silicon carbide; and\n
heat treating the doped silicon carbide in an inert atmosphere, and electrochemical lithiation of the heat-treated doped silicon carbide, wherein lithiation capacity of the heat-treated doped silicon carbide is greater than lithiation capacity of the doped silicon carbide."],"number":1,"annotation":false,"title":false,"claim":true},{"lines":["A method according to claim 1 wherein the doped silicon carbide is doped 6H-SiC (0001)."],"number":2,"annotation":false,"title":false,"claim":true},{"lines":["A method according to claim 2 wherein the doped 6H-SiC (0001) is n-type 6H-SiC (0001)."],"number":3,"annotation":false,"title":false,"claim":true},{"lines":["A method according to claim 1 wherein lithiation capacity of the heat-treated doped silicon carbide is up to 57-fold greater than lithiation capacity of the doped silicon carbide."],"number":4,"annotation":false,"title":false,"claim":true},{"lines":["A method according to claim 3 wherein lithiation capacity of the heat-treated n-type 6H-SiC (0001) is up to 57-fold greater than lithiation capacity of the n-type 6H-SiC (0001)."],"number":5,"annotation":false,"title":false,"claim":true},{"lines":["A method according to claim 1 wherein the inert atmosphere is argon at atmospheric pressure."],"number":6,"annotation":false,"title":false,"claim":true},{"lines":["A method according to claim 1 wherein the inert atmosphere is argon at less than atmospheric pressure."],"number":7,"annotation":false,"title":false,"claim":true},{"lines":["A method according to claim 1 wherein the inert atmosphere has a pressure below 1×10−5 Torr."],"number":8,"annotation":false,"title":false,"claim":true},{"lines":["A method according to claim 1 wherein the inert atmosphere has a pressure below 1×10−9 Torr."],"number":9,"annotation":false,"title":false,"claim":true},{"lines":["A method according to claim 9 wherein the inert atmosphere has a pressure below 1×10−10 Torr."],"number":10,"annotation":false,"title":false,"claim":true},{"lines":["A method according to claim 1 wherein the doped silicon carbide is heat treated to at least about 1100° C."],"number":11,"annotation":false,"title":false,"claim":true},{"lines":["A method according to claim 1 wherein the heat-treated doped silicon carbide has √3×√3 surface reconstruction."],"number":12,"annotation":false,"title":false,"claim":true},{"lines":["A method according to claim 1 wherein the heat-treated doped silicon carbide has (6√3×6√3)R30° surface reconstruction."],"number":13,"annotation":false,"title":false,"claim":true},{"lines":["A method according to claim 13 wherein the heat-treated doped silicon carbide has the (6√3×6√3)R30° surface reconstruction and graphitic layers on the surface."],"number":14,"annotation":false,"title":false,"claim":true},{"lines":["A method according to claim 14 wherein the graphitic layers are a mixture of single and bilayer graphene."],"number":15,"annotation":false,"title":false,"claim":true},{"lines":["A method according to claim 14 wherein the graphitic layers are multiple layers of graphene."],"number":16,"annotation":false,"title":false,"claim":true},{"lines":["A method according to claim 1 wherein lithiation of the heat-treated doped silicon carbide results in 1:1 Li to Si ratio within at least the top 3 μm of the silicon carbide surface."],"number":17,"annotation":false,"title":false,"claim":true},{"lines":["An anode for a lithium-ion battery, wherein the anode comprises an increased lithium-ion capacity of silicon carbide prepared by a method according to claim 1."],"number":18,"annotation":false,"title":false,"claim":true},{"lines":["A lithium-ion battery comprising an anode according to claim 18."],"number":19,"annotation":false,"title":false,"claim":true},{"lines":["A method according to claim 1 wherein the doped silicon carbide is selected from the group consisting of silicon carbide wafer or silicon carbide powder."],"number":20,"annotation":false,"title":false,"claim":true}]}},"filters":{"npl":[],"notNpl":[],"applicant":[],"notApplicant":[],"inventor":[],"notInventor":[],"owner":[],"notOwner":[],"tags":[],"dates":[],"types":[],"notTypes":[],"j":[],"notJ":[],"fj":[],"notFj":[],"classIpcr":[],"notClassIpcr":[],"classNat":[],"notClassNat":[],"classCpc":[],"notClassCpc":[],"so":[],"notSo":[],"sat":[]},"sequenceFilters":{"s":"SEQIDNO","d":"ASCENDING","p":0,"n":10,"sp":[],"si":[],"len":[],"t":[],"loc":[]}}